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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) TRANSISTOR ( NPN ) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature unless Test Value 75 40 6 600 300 -55to+150 otherwise specified MIN 75 40 6 TYP Units V V V mA mW MAX UNIT V V V 0.1 0.1 0.1 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO HFE(1) DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time VCE(sat) VBE(sat) conditions IE=0 IC= 10A IC= 10mA IB=0 IE=10A IC=0 VCB=70 V , IE=0 VCE=60V , VEB= 3V , VBE(off)=3V IC=0 A A A VCE=10V, IC= 150mA VCE=10V, IC= 0.1mA VCE=10V, IC= 500mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA VCE=20V, IC= 20mA 100 40 42 300 0.6 0.3 1.2 300 10 25 225 60 V V MHz nS nS nS nS fT td tr tS tf f=100MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA Typical Characteristics 3DK2222A |
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